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于飞

发布时间:2025-02-26点击数:

于飞 副教授 硕士生导师

联系方式:icyufei@126.com

通讯地址:大学城校区理学馆611-3

所属团队:电子设计自动化(EDA)科研团队

研究方向:

1.半导体器件紧凑模型

2.模拟/射频IC设计

3.半导体器件工艺优化

教育经历:

2013.09-2016.06 暨南大学 计算机应用技术 博士

2010.09-2013.06 暨南大学 通信与信息系统 硕士

2005.09-2009.06 南昌航空大学 通信工程 学士

工作经历:

2023.10-至今 广东工业大学 集成电路学院 副教授

2021.01-2023.09 华侨大学 信息科学与工程学院 副教授

2016.07-2020.12 华侨大学 信息科学与工程学院 讲师

科研项目:

1.国家自然科学基金面上项目,面向IC设计EDA工具的AlGaN/GaN HEMTs物理基紧凑模型研究(62374046),2024.01.01—2027.12.31,在研。

2.国家自然科学基金青年科学基金项目,纳米线晶体管的物理机制和紧凑模型研究(61904056),2020.01.01—2022.12.31,已结题。

3.福建省自然科学基金面上项目,依托DTCO流程的14nm及以下GAA晶体管物理基紧凑建模及EDA工具嵌入(2023J01111),2023.05.01—2026.04.30,参与,在研。

4.福建省自然科学基金面上项目,AlGaN/GaN高电子迁移率晶体管(HEMT)的紧凑模型及其可靠性研究(2022J01293),2022.05.01—2025.04.30,在研。

5.华侨大学中青年教师科技创新资助项目,高性能金属氧化物(AOS)薄膜晶体管(TFT)的制备工艺与紧凑模型研究(ZQN-809),2020.05.01—2024.04.30,已结题。

6.福建省中青年教师科技创新资助计划项目,a-InGaZnO TFTs物理机制和紧凑模型研究(JAT170034),2017.09.30—2019.08.31,已结题。

7.华侨大学高层次人才资助项目,多晶硅纳米线TFT的物理机制和模型研究(16BS706),2016.11.01—2018.10.31,已结题。

科研成果:

1.代表性学术论文:

[1]. Baoqin Zhang(学生), Xia Zeng, Junjie Feng, Jiahui Liu, Gongyi Huang, Chuanzhong Xu, Fei Yu*(于飞), surface potential analysis method and I-V model of AlGaN/GaN high-electron mobility transistors incorporating the two lowest subbands, Journal of Applied Physics 136, 234501 (2024).

[2]. Junjie Feng(学生), Xia Zeng, Baoqin Zhang, Jiahui Liu, Chuanzhong Xu, Fei Yu*(于飞), An analytical and adaptive method for solar photovoltaic modules parameters extraction, Renewable Energy 236, 121491 (2024).

[3]. 王诗淳,冯俊杰,张保钦,韩玉杰,徐传忠,曾霞,于飞*,全环绕栅极场效应晶体管的-Ⅴ模型紧凑建模,集成电路与嵌入式系统2410),9-182024.

[4]. Fei Yu#(于飞),Zhaoxu Song, Kun Fang, Ying Liang, Gongyi Huang, Chuanzhong Xu, Jiahui Liu, An undefinedytical Drain Current Model of ZnO-Based Amorphous Oxide Semiconductor Thin-Film Transistors, IEEE Transactions on Electron Devices 696139-61452022.

[5]. K. M. Chen(学生),Fei Yu*(于飞),Wanling Deng, X. Wu, Chuanzhong XuGongyi Huang, J. K. Huang, A Lumped-Parameter Equivalent Circuit Model for Perovskite Solar Cells' S-Shaped I-V KinksIEEE Electron Device Letters 42379-3822021.

【封面论文:https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9362001

[6]. Chuanzhong Xu, Xiaofang Sun, Ying Liang, Gongyi Huang, Fei Yu*(于飞),An undefinedytical Effective-Diode-Based undefinedysis of Industrial Solar Cells From Three-Diode Lumped-Parameter ModelIEEE Transactions on Electron Devices 682753-27582021.

[7]. Chuanzhong Xu, Ying Liang, Xiaofang Sun, Gongyi Huang, Fei Yu*(于飞),A Noniterative Parameter-Extraction Method for Single-Diode Lumped Parameter Model of Solar CellsIEEE Transactions on Electron Devices 684529-45352021.

[8]. Zhaoxu Song(学生), Kun Fang, Xiaofang Sun, Ying Liang, Wei Lin, Chuanzhong Xu, Gongyi Huang, Fei Yu*(于飞),An Effective Method to Accurately Extract the Parameters of Single Diode Model of Solar Cells, Nanomaterials 11, 2615 (2021).

[9]. Gongyi Huang, Ying Liang, Xiaofang Sun, Chuanzhong Xu, Fei Yu*(于飞),undefinedyzing S-Shaped IV characteristics of solar cells by solving three-diode lumped-parameter equivalent circuit model explicitly, Energy, 212, 1187022020.

[10]. Fei Yu#(于飞),Gongyi Huang, Chuanzhong XuAn explicit method to extract fitting parameters in lumped-parameter equivalent circuit model of industrial solar cellsRenewable Energy 1462188-2198 (2020).

[11]. Fei Yu#(于飞),Ying LiangXiaofang SunGongyi HuangChuanzhong XuModelling solar cellsS-shaped I-V characteristics with an analytical solution to lumped-parameter equivalent circuit modelSolar Energy 202498-5062020.

[12]. Tiankuo Wei(学生), Fei Yu*(于飞), Gongyi HuangChuanzhong XuA Particle-Swarm-Optimization-Based Parameter Extraction Routine for Three-Diode Lumped Parameter Model of Organic Solar CellsIEEE Electron Device Letters 401511-15142019.

[13]. Fei Yu#(于飞), Gongyi Huang, Wei Lin, and Chuanzhong XuAn undefinedysis for S-Shaped I-V Characteristics of Organic Solar Cells Using Lumped-Parameter Equivalent Circuit ModelSolar Energy 177229-2402019.

[14]. Fei Yu#(于飞), Gongyi Huang, Wei Lin, and Chuanzhong XuLumped-Parameter Equivalent Circuit Model for S-Shape Current-Voltage Characteristics of Organic Solar CellsIEEE Transactions on Electron Devices 66670-6772019.

[15]. Tiankuo Wei(学生), Chuanzhong Xu, Wei Lin, Gongyi Huang, and Fei Yu*(于飞),A Lumped-Parameter Equivalent Circuit Modeling for I-V Characteristics of Organic Solar Cells with S-Shaped KinkCrystals 9,802019.

[16]. Fei Yu#(于飞),Gongyi Huang, Wei Lin, Chuanzhong Xu, Xiaoyu Ma, Wanling Deng, and Junkai HuangLumped-parameter equivalent circuit modeling of solar cells with S-shaped I-V characteristicsSolid State Electronics 156,79-862019.

[17]. Chuanzhong Xu, Fei Yu*(于飞), Gongyi Huang, Wanling Deng, Xiaoyu Ma, and Junkai HuangA Surface-Potential-Based undefinedytical I-V Model of Full-Depletion Single-Gate SOI MOSFETsElectronics 8,7852019.

[18]. Fei Yu#(于飞), Chuanzhong Xu, and Gongyi Huang, A Surface-Potential-Based Drain Current Compact Model of Dynamic-Depletion Polysilicon Thin-Film TransistorsIEEE Transactions on Electron Devices 65, 4875-48822018.

[19]. Fei Yu#(于飞), Wanling Deng, Gongyi Huang, Chuanzhong Xu, Xiaoyu Ma, and Junkai HuangAn undefinedytical Surface-Potential-Based Drain Current Model of Full Depleted Polysilicon TFTsIEEE Transactions on Electron Devices 652855-28622018.

[20]. Chuanzhong XuFei Yu*(于飞), Wei Lin, and Gongyi HuangAn Improved Organic Solar Cell Lumped-Parameter Equivalent Circuit ModelCrystals 8,2772018.

[21]. Gongyi HuangFei Yu*(于飞), and Chuanzhong XuAn undefinedytical Solution to Lumped Parameter Equivalent Circuit Model of Organic Solar CellsCrystals 8,2242018.

[22]. Fei Yu#(于飞), Chuanzhong Xu, Gongyi Huang, Wei Lin, Tsair-Chun LiangA closed-form trapped-charge-included drain current compact model for amorphous oxide semiconductor thin-film transistorsMicroelectronics Reliability 91,307-3122018.

[23]. Fei Yu#(于飞), Gongyi Huang, Wei Lin, and Chuanzhong XuAn analytical drain current model for symmetric double-gate MOSFETsAIP Advances 8,0451252018.

[24]. Fei Yu#(于飞), Wanling Deng, Junkai Huang, Xiaoyu Ma, and Juin J. LiouA Physics-Based Compact Model for Symmetrical Double-Gate Polysilicon Thin-Film TransistorsIEEE Transactions on Electron Devices 642221-22272017.

[25]. Fei Yu#(于飞), Xiaoyu Ma, Wanling Deng, Juin J. Liou, and Junkai HuangA surface-potential-based drain current compact model for a-InGaZnO thin-film transistors in Non-Degenerate conduction regimeSolid State Electronics 13738-432017.

[26]. Fei Yu#(于飞), Wanling Deng, Junkai Huang, Xiaoyu Ma, and Songlin ChenAn Explicit Physics-Based I-V Model for Surrounding-Gate Polysilicon TransistorsIEEE Transactions on Electron Devices 631059-10652016.

 

 

 

 

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