黄福平 讲师

联系方式：fupinghuang2024@gdut.edu.cn

通讯地址：广东工业大学大学城校区理学馆

所属团队：宽禁带半导体器件与集成团队

简介：

黄福平，1995年生，博士、讲师、青百B层次人才，博士毕业于河北工业大学；主要从事宽禁带功率半导体器件的TCAD仿真建模、设计与工艺制备研究。

研究方向：

宽禁带功率半导体器件、半导体器件物理、TCAD仿真建模设计与工艺制备

教育经历：

2019.09-2024.06  河北工业大学  电子科学与技术  博士

2015.09-2019.06  哈尔滨理工大学 应用物理学  本科

工作经历：

2024.07-至今  广东工业大学 集成电路学院 讲师

科研成果：

1.代表性学术论文：

[1] F. Huang, X. Jia, Y. Liu, K. Tian, C. Chu, Q. Zheng, Y. Zhang, Z. Xin, Z.-H. Zhang*, and Q. Li*, “Advances of beveled mesas for GaN-based trench Schottky barrier diodes”, AIP Advances, 11(4), 045316 (2021).

[2] F. Huang, C. Chu, X. Jia, K. Tian, Y. Zhang, Q. Zheng, Q. Li, and Z.-H. Zhang*, “ Simulation study for GaN-based hybrid trench MOS barrier Schottky diode with an embedded p-type NiO termination: increased forward current density and enhanced breakdown voltage”, Japanese Journal of Applied Physics, 61(1), 014002 (2022).

[3] F. Huang, C. Chu, Z. Wang, Y. Zhang, J. Ye, Y. Lv, H. Gong, Y. Li, Z.-H. Zhang*, S. Gu, and R. Zhang, “GaN-based quasi-vertical Schottky barrier diode hybridized with p-NiO layer to achieve 1.1 kV breakdown voltage and enhance the current spreading effect”, Applied Physics Express, 15(8), 084001 (2022).

[4] F. Huang, Z. Wang, C. Chu, Q. Liu, Y. Li, Z. Xin, Y. Zhang, Q. Sun, and Z.-H. Zhang*, “MIS-Based GaN Schottky Barrier Diodes: Interfacial Conditions on the Reverse and Forward Properties”, IEEE Transactions on Electron Devices, 69(10), 5522-5529 (2022).

[5] F. Huang, C. Chu, Z. Wang, K. Tian*, H. Gong, Y. Zhang, Y. Li, J. Ye, Z.-H. Zhang, “1.43 kV GaN-based MIS Schottky barrier power diodes”, J. Phys. D: Appl. Phys., 57, 185102 (2024).

[6] F. Huang, C. Chu, Y. Zhang, K. Tian, X. Jia, H. Peng, and Z.-H. Zhang*, “GaN-based quasi-vertical Schottky barrier diodes with the sidewall field plate termination for obtaining low leakage current and high breakdown voltage”, 2021 IEEE 1st International Power Electronics and Application Symposium (PEAS), 1-4 (2021).

[7] Z. Wang, F. Huang, C. Chu, Y. Zhang, Q. Sun, and Z.-H. Zhang*, “On the super-junction formed by using field plate for lateral AlGaN/GaN-based Schottky barrier diodes”, Japanese Journal of Applied Physics, 62(9), 094001 (2023).

[8] Z. Wang, F. Huang, C. Chu, K. Tian*, H. Gong, N. Sun, Y. Zhang, Y. Li, J. Ye, Z.-H Zhang, “2.5 kV/1.95GW/cm2 AlGaN/GaN based lateral Schottky barrier diodes without defect-related surface tunneling effect at the anode region”, IEEE Transactions on Electron Devices, 71(6), 3811-3817 (2024).

2.知识产权：

[1].一种具有倾斜侧壁场板的倒梯形栅 MOSFET 器件结构，CN111463266A，黄福平，张勇辉，张紫辉.

[2].一种具有P型氧化镍材料的混合式肖特基势垒二极管结构，CN112909076A，张紫辉，黄福平，张勇辉，楚春双.

[3].具有介电调控混合场板终端的SBD结构及其制备方法，CN115411095A，田康凯，黄福平，张紫辉.

[4].一种具有极化 p 型掺杂的[0001]晶向的铝镓氮场环终端的肖特基势垒二极管结构，CN114373805A，张紫辉，黄福平，楚春双，张勇辉.