王成财 讲师
联系方式：wangchengcai@gdut.edu.cn
通讯地址：广东工业大学大学城校区理学馆
所属团队：宽禁带半导体器件与集成团队
简介：
王成财，博士、讲师、青百B层次人才，博士毕业于南方科技大学，主要致力于第三代宽禁带半导体氮化镓材料（GaN）的电力电子器件的研究，在氮化镓电力电子器件的器件设计，微纳加工工艺、表征测试、器件物理及可靠性分析等方面进行相关研究。
研究方向：
1. 宽禁带功率半导体器件
2. 半导体器件物理
3. 可靠性表征，失效分析
教育经历：
南方科技大学 物理学 博士
中山大学 光学工程 硕士
工作经历：
广东工业大学 集成电路学院 讲师
香港理工大学 研究助理
华为科技有限公司 工程师
主要荣誉：
南方科技大学优秀毕业生
EDTM最佳论文奖
科研成果：
1. C. Wang, et al, "E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs," IEEE Electron Device Letters, 2020. （ESI高被引）
2. C. Wang, et al, " Normally-off HEMT-based Bipolar p-FET with Enhanced Conduction Capability," IEEE Transactions on Electron Device, 2025.
3. C. Wang, et al, " Gate reliability enhancement of p-GaN gate HEMTs with oxygen compensation technique," Applied Physics Express, 2024. （Power electronics world报道）
4. C. Wang et al., " GIT-Based Bipolar p-FET with Enhanced Conduction Capability on E-mode GaN-on-Si HEMT Platform," 2025 35th Electron Devices Technology and Manufacturing Conference (EDTM’2025), Hong Kong, 2025. （2025年最佳论文奖）
5. C. Wang et al, "E-mode p-n Junction/AlGaN/GaN HEMTs with Enhanced Gate Reliability," 2020 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’20), Vienna, Austria, 2020.
6. C. Wang et al, “Impacts of n-GaN Doping Concentration on Gate Reliability of p-n Junction/AlGaN/GaN HEMTs," 2023 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’23), Hongkong, 2023.
7. X. Liang, C. Wang, et al, "Efficient Defect Engineering for Solution Combustion Processed In-Zn-O thin films for high performance transistors," Semiconductor Science & Technology, 2017. (共同一作)
8. M. Hua, C. Wang, et al, "Gate Current Transport in Enhancement-mode p-n Junction/AlGaN/GaN (PNJ) HEMT," in IEEE Electron Device Letters, 2021.
9. M. Hua, J. Chen, C. Wang, et al, "E-mode p-FET-bridge HEMT for Higher VTH and Enhanced Stability,", in 2020 IEEE International Electron Devices Meeting (IEDM), 2020.
10. J. Tang, Z. Jiang, C. Wang, et al, " Bipolar p-FET with Enhanced Conduction Capability on E-mode GaN-on-Si HEMT Platform", in 2023 IEEE International Electron Devices Meeting (IEDM), 2023.
11. X. Zhao, P. Song, C. Wang, et al, "Engineering covalently bonded 2D layered materials by self-intercalation," Nature, 2020.
