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田康凯

发布时间:2023-05-07点击数:


田康凯 讲师

联系方式:kk_tian@gdut.edu.cn

通讯地址:广东工业大学大学城校区理学馆

所属团队:宽禁带半导体器件与集成团队


简介:

田康凯,1994年生,博士、讲师、青百B层次人才,博士毕业于河北工业大学;主要从事宽禁带半导体分立器件、芯片设计与TCAD仿真技术的研究。

研究方向:

宽禁带半导体器件、半导体器件物理、芯片设计与仿真技术

教育经历:

2016.9-2021.6  河北工业大学,电子科学与技术,博士学位

2012.9-2016.6  南通大学,集成电路设计与集成系统,学士学位;

工作经历:

2023.4- 广东工业大学 集成电路学院 讲师

2021.6-2023.3  天津赛米卡尔科技有限公司 技术总监

科研成果:

1.代表性学术论文:

[1] K. Tian, Q. Chen, C. Chu, M. Fang, L. Li, Y. Zhang, W. Bi, C. Chen, Z. –H. Zhang* and J. Dai*, “Investigations on AlGaN-based deep ultraviolet light-emitting diodes with Si-doped quantum barriers of different doping concentrations”, Phys. Status Solidi RRL 12(1), 1700346 (2017).

[2] K. Tian, C. Chu, H. Shao, J. Che, J. Kuo, M. Fang, Y. Zhang, W. Bi and Z. –H. Zhang*, “On the polarization effect of the p-EBL/p-AlGaN/p-GaN structure for AlGaN-based deep-ultraviolet light-emitting diodes”, Superlattice Microst. 122, 280-285 (2018).

[3] K. Tian, C. Chu, J. Che, H. Shao, J. Kou, Y. Zhang, Z. Zhang and T. Wei, “On the polarization self-screening effect in multiple quantum wells for nitride based near ultraviolet light emitting diodes”, Chin. Opt. Lett. Lett., 17 (12), 122301 (2019).

[4] K. Tian, C. Chu, J. Che, H. Shao, J. Kou, Y. Zhang, Q. Sun, Z. -H. Zhang*, T. Wei, Interplay between various active regions and the interband transition for AlGaN based deep ultraviolet light emitting diodes to enable a reduced TM polarized emission”, J. Appl. Phys. 126, 245701 (2019).

[5] C. Chu#, K. Tian# and Zhang Zi-Hui, Polarization self-screened multiple quantum wells for deep ultraviolet light-emitting diodes to enhance the optical power, IEEE Photonics Journal, 2021, 13(5): 8200305.

[6] Z. -H. Zhang*, K. Tian, C. Chu, M. Fang, Y. Zhang, W. Bi and H. –C. Kuo*, “Establishment of the relationship between the electron energy and the electron for AlGaN based ultraviolet light-emitting diodes”, Opt. Express 26(14), 17922 (2018).

[7] 田康凯,楚春双,张紫辉, 等。AlGaN基深紫外发光二极管空穴注入效率的提高途径 [J]. 激光与光电子学进展,2018, 56(6) : 060001-1-060001-15. (CSCD、特邀综述、封面文章,优秀论文)

2.知识产权:

具有超晶格隧穿结的发光二极管外延结构及其制备方法,CN107230738A,田康凯,楚春双,方梦倩,李路平,张勇辉,张紫辉



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